P-acetoxystyrene can be used to synthesize polyparahydroxystyrene as a main component of a photoresist (photoresist). Poly-p-hydroxystyrene series of chemically amplified photoresists are currently the mainstream photoresist products in the world, and are one of the key technologies for processing photo-etching integrated circuits and manufacturing chips. The photo-etching technology is developed from the production of 0.3-0.28μm line width to the deep ultraviolet light (wavelength 248nm) to produce 0.18μm line width, and the ultra-deep ultraviolet light (wavelength 193nm) can be used to trace the line width to 0. 11 μm microcircuit. 248nm photoresist usually uses poly-p-hydroxystyrene derivative as film-forming resin, aryl iodonium salt or sulfonium salt as photoacid generator, using chemical amplification technology to release photoacid generator under light The acid, then acid catalyzes the cross-linking of the polymer (negative gelation) or the deprotection reaction (positive gelatinization), thereby greatly increasing the photosensitivity.